january 2011 doc id 16097 rev 2 1/9 9 BUL416T high voltage fast-switching npn power transistor features high voltage capability low spread of dynamic parameters very high switching speed applications electronic ballast fo r fluorescent lighting switch mode power supplies description the BUL416T is an high voltage fast-switching npn power transistor manufactured in planar technology with diffused collector. this device is designed for lighting and smps applications where high voltage capab ility is needed coupled with high switching speed. figure 1. internal schematic diagram to-220 1 2 3 table 1. device summary order code marking package packaging BUL416T BUL416T to-220 tube www.st.com
electrical ratings BUL416T 2/9 doc id 16097 rev 2 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 1600 v v ceo collector-emitter voltage (i b = 0) 800 v v ebo emitter-base voltage (i c = 0) 9 v i c collector current 6 a i cm collector peak current (t p < 5 ms) 9 a i b base current 5 a i bm base peak current (t p < 5 ms) 8 a p tot total dissipation at t c 25 c 110 w t stg storage temperature - 65 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case max 1.14 c/w r thja thermal resistance junction-ambient max 62.5 c/w
BUL416T electrical characteristics doc id 16097 rev 2 3/9 2 electrical characteristics t case = 25 c unless otherwise specified. table 4. electrical characteristics symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 1600 v v ce = 1600 v t c = 125 c 100 500 a a i ceo collector cut-off current (i b = 0) v ce = 800 v 250 a v ceo(sus) (1) 1. pulse test: pulse duration 300 s, duty cycle 2 %. collector-emitter sustaining voltage (i b = 0) i c =100 ma 800 v v ebo emitter-base voltage (i c = 0) i e = 10 ma 9 v v ce(sat) (1) collector-emitter saturation voltage i c = 2 a _ i b = 0.4 a i c = 4 a __ i b = 1.33 a 1.2 1.5 v v v be(sat) (1) base-emitter saturation voltage i c = 2 a _ _ i b = 0.4 a i c = 4 a _ i b = 1.33 a 1.2 1.5 v v h fe (1) dc current gain i c = 10 ma v ce = 5 v i c = 0.7 a v ce = 5 v 10 18 32 t s t f inductive load storage time fall time i c = 3 a i b1 = 1 a v be(off) = - 5 v r bb = 0 v cl = 200 v l = 200 h 1.8 800 s ns
electrical characteristics BUL416T 4/9 doc id 16097 rev 2 2.1 test circuits figure 2. inductive load switching test circuit 1. fast electronic switch 2. non-inductive resistor 3. fast recovery rectifier
BUL416T package mechanical data doc id 16097 rev 2 5/9 3 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data BUL416T 6/9 doc id 16097 rev 2 table 5. to-220 type a mechanical data dim. mm. min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
BUL416T package mechanical data doc id 16097 rev 2 7/9 figure 3. to-220 type a drawing 00159 88 _typea_rev_ s
revision history BUL416T 8/9 doc id 16097 rev 2 4 revision history table 6. document revision history date revision changes 06-aug-2009 1 initial release. 25-jan-2010 2 document status promoted from preliminary data to datasheet.
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